General Information
Scope
- Nanometer-scale transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanism
- Junction and insulator materials and process technology for nanoelectronic devices
- Techniques for fabrication of nanostructures, including nanometer scale patterning
- Physics of nanoelectronic devices, e.g., quantum effects, non-equilibrium transport
- Modeling and simulation of nanoelectronic devices, e.g., including atomistic effects
- Nanoscale surface, interface, and heterojunction effects in devices
- Device scaling issues including doping fluctuations and atomic granularity
- Circuit design issues and novel circuit architectures
- Optoelectronics using silicon nanostructures
- Techniques targeting zero power electronics (self-supplying), including wireless sensors, energy harvesting, steep slope devices, ultra-low power design and devices
- Devices for 3D and heterogeneous integration on Silicon, including Graphene, III-V devices, CNT, spin-based devices, MEMS and NEMS, etc.
- Novel transistors based on two dimensional materials, e.g., MoS2, WS2, etc.
- Novel non-volatile memories, e.g., MRAM, RRAM, PCM, FeRAM etc.
- Neuromorphic devices and architectures for AI
- Integrated energy harvesting and energy storage based on new material and structures
- Reliability and Characterization of nanoelectronic devices
- Environmental devices which contribute to low-carbon society (wireless sensors, energy harvesters, steep slope devices, etc.)
- Power devices (SiC, GaN etc.)
- Silicon and Non-silicon quantum devices and low temperature electronics
Venue
Hilton Hawaiian Village, Honolulu, HI USA
Meeting Rooms
Located in the 2nd floor of TAPA Tower, across the street of ABC store Entering Hilton on the LEFT
